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| ZTX652_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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ZTX652 Not Recommended for
New Design Please Use ZTX653
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 Â JULY 94
FEATURES
* 100 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt
ZTX652
ZTX653
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL ZTX652 ZTX653
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
derate above 25°C
VCBO
VCEO
VEBO
ICM
IC
Ptot
100
120
80
100
5
6
2
1
5.7
V
V
V
A
A
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
ZTX652
ZTX653
SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
V(BR)CBO 100
V(BR)CEO 80
V(BR)EBO 5
ICBO
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
IEBO
VCE(sat)
VBE(sat)
VBE(on)
120
100
5
0.1
10
0.1
0.13 0.3
0.23 0.5
0.9 1.25
0.8 1
V
V
V
µA
0.1 µA
µA
10 µA
0.1 µA
0.13 0.3 V
0.23 0.5 V
0.9 1.25 V
0.8 1 V
IC=100µA
IC=10mA*
IE=100µA
VCB=80V
VCB=100V
VCB=80V,Tamb=100°C
VCB=100V,Tamb=100°C
VEB=4V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
IC=1A, VCE=2V*
3-222
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