ZTX651STOA Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 60 Volt V_CEO
* 2 Amp continuous current
* Low saturation voltage
* P_tot=1 Watt
ABSOLUTE MAXIMUM RATINGS.
ZTX650
ZTX651
C
B
E
E-Line
TO92 Compatible
PARAMETER
SYMBOL ZTX650 ZTX651
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
derate above 25°C
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
60
80
45
60
5
6
2
1
5.7
V
V
V
A
A
W
mW/°C
Operating and Storage Temperature Range
T_j:T_stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
ZTX650
ZTX651
SYMBOL _{MIN. TYP. MAX. MIN. TYP. MAX.} UNIT CONDITIONS.
Collector-Base
V_(BR)CBO 60
Breakdown Voltage
Collector-Emitter V_(BR)CEO 45
Breakdown Voltage
Emitter-Base
V_(BR)EBO 5
Breakdown Voltage
Collector Cut-Off I_CBO
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
I_EBO
V_CE(sat)
V_BE(sat)
V_BE(on)
80
60
5
0.1
10
0.1
0.12 0.3
0.23 0.5
0.9 1.25
0.8 1
V
V
V
µA
0.1 µA
µA
10 µA
0.1 µA
0.12 0.3 V
0.23 0.5 V
0.9 1.25 V
0.8 1
V
I_C=100µA
I_C=10mA*
I_E=100µA
V_CB=45V
V_CB=60V
V_CB=45V,T_amb=100°C
V_CB=60V,T_amb=100°C
V_EB=4V
I_C=1A, I_B=100mA*
I_C=2A, I_B=200mA*
I_C=1A, I_B=100mA*
IC=1A, V_CE=2V*
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