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| ZTX649_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 Â APRIL 94
FEATURES
* 25 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt
APPLICATIONS
* Motor driver
* DC-DC converters
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
derate above 25°C
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Operating and Storage Temperature Range Tj:Tstg
ZTX649
C
B
E
E-Line
TO92 Compatible
VALUE
35
25
5
6
2
1
5.7
-55 to +200
UNIT
V
V
V
A
A
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 35
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 25
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE=100µA
Collector Cut-Off
ICBO
Current
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
0.1
µA
10
µA
0.1
µA
0.12 0.3 V
0.23 0.5 V
0.9
1.25 V
VCB=30V
VCB=30V,Tamb=100°C
VEB=4V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.8
1
V
IC=1A, VCE=2V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency fT
70
200
100 200 300
75
150
15
50
IC=50mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
150 240
MHz IC=100mA, VCE=5V
f=100MHz
3-216
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