 English |
|
|
|
|
|
|
|
| ZTX558 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR | |||
| |||
|
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 Â APRIL 94
FEATURES
* 400 Volt VCEO
* 200mA continuous current
* Ptot= 1 Watt
ZTX558
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
VALUE
-400
-400
-5
-200
1
-55 to +200
UNIT
V
V
V
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO -400
UNIT
V
Collector-Emitter
Breakdown Voltage
VBR(CEO) -400
Emitter-Base Breakdown V(BR)EBO -5
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
ICES
IEBO
VCE(sat)
V
V
-100 nA
-100 nA
-100 nA
-0.2 V
-0.5 V
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter
Turn On Voltage
VBE(on)
Static Forward Current hFE
100
Transfer Ratio
100
15
Transition
Frequency
fT
50
-0.9 V
-0.9 V
300
MHz
Collector-Base
Cobo
Breakdown Voltage
5
pF
Switching times
ton
toff
95
ns
1600
ns
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3-202
CONDITIONS.
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-320V
VCE=-320V
VEB=-4V
IC=-20mA, IB=-2mA
IC=-50mA, IB=-6mA
IC=-50mA, IB=-5mA
IC=-50mA, VCE=-10V
IC=-1mA, VCE=-10V
IC=-50mA, VCE=-10V
IC=-100mA, VCE=-10V*
IC=-10mA, VCE=-20V
f=20MHz
VCB=-20V, f=1MHz
IC=-50mA, VC=-100V
IB1=5mA, IB2=-10mA
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese