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| ZTX549_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 Â MARCH 94
FEATURES
* 30 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
ZTX549
ZTX549A
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at Tamb=25°C
derate above 25°C
VCBO
VCEO
VEBO
ICM
IC
Ptot
-35
V
-30
V
-5
V
-2
A
-1
A
1
W
5.7
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO -35
Voltage
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -30
V
IC=-10mA
Emitter-Base Breakdown V(BR)EBO -5
Voltage
V
IE=-100µA
Collector Cut-Off Current ICBO
-0.1 µA
-10 µA
VCB=-30V
VCB=-30V, Tamb=100°C
Emitter Cut-Off Current
IEBO
-0.1 µA
VEB=-4V
Collector-Emitter
Saturation Voltage
ZTX549A
Base-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
-0.25 -0.50 V
-0.50 -0.75 V
-0.30 V
-0.9 -1.25 V
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-100mA, IB=-1mA*
IC=-1A, IB=-100mA*
Base-Emitter
Saturation Voltage
VBE(on)
-0.85 -1
V
IC=-1A, VCE=-2V*
Static Forward Current
hFE
Transfer Ratio
70
200
80
130
40
80
ZTX549
100 160 300
ZTX549A
150 200 500
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-500mA, VCE=-2V*
3-191
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