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| ZTX510 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR | |||
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PNP SILICON PLANAR HIGH SPEED
SWITCHING TRANSISTOR
ISSUE 2 Â MARCH 94
FEATURES
* 12 Volt VCEO
* fT=400MHz
ZTX510
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IB
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
-12
-12
-4
-40
-200
300
-55 to +175
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO -12
Collector-Emitter
Sustaining Voltage
VCEO(sus) -12
Collector Cut-Off
ICBO
-0.1
Current
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.15
-0.2
-0.5
Base-Emitter
Saturation Voltage
VBE(sat)
-0.76
-0.82
-1.7
-0.98
-1.2
Static Forward Current hFE
30
Transfer Ratio
40
150
20
Transition Frequency fT
400
UNIT
V
V
µA
V
V
V
V
V
V
MHz
Output Capacitance
Cobo
6
pF
Input Capacitance
Cibo
6
pF
Switching Times
ton
60
ns
toff
90
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
CONDITIONS.
IC=-10µA
IC=-10mA
VCB=-6V
IC=-10mA, IB=-1mA*
IC=-30mA, IB=-3mA*
IC=-100mA, IB=-10mA*
IC=-10mA, IB=-1mA*
IC=-30mA, IB=-3mA*
IC=-100mA, IB=-10mA*
IC=-10mA, VCE=-0.3V*
IC=-30mA, VCE=-0.5V*
IC=-100mA, VCE=-1V*
IC=-30mA, VCE=-5V
f=100MHz
VCB=-5V, f=140KHz
VEB=-0.5V, f=140KHz
IC=-30mA,
IB1=IB2=-1.5mA
3-186
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