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| ZTX457 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR | |||
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NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 Â MARCH 1994
FEATURES
* 300 Volt VCEO
* 0.5 Amp continuous current
* Ptot= 1 Watt
ZTX457
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
300
300
5
1
500
1
-55 to +200
UNIT
V
V
V
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 300
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
VCEO(sus) 300
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE=100µA
Collector Cut-Off
ICBO
Current
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100 nA
10
µA
100 nA
0.3 V
VCB=200V
VCB=200V, Tamb=100°C
VEB=4V
IC=100mA, IB=10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1
V
IC=100mA, IB=10mA*
Base-Emitter
Turn On Voltage
VBE(on)
1
V
IC=100mA, VCE=10V*
Static Forward Current hFE
50
Transfer Ratio
50
25
Transition Frequency fT
75
IC=10mA, VCE=10V*
300
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
MHz IC=50mA, VCE=10V
f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3-181
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