ZTX454 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – MARCH 1994
FEATURES
* 140 Volt V_CEO
* 1 Amp continuous current
* P_tot= 1 Watt
ZTX454
ZTX455
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
E-Line
TO92 Compatible
ZTX454 ZTX455
140
160
120
140
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL
ZTX454
ZTX455 UNIT
MIN. MAX. MIN. MAX.
Collector-Base
V_(BR)CBO 140
160
V
Breakdown Voltage
Collector-Emitter
V_CEO(sus) 120
140
V
Sustaining Voltage
Emitter-Base
V_(BR)EBO 5
5
V
Breakdown Voltage
Collector Cut-Off
I_CBO
Current
0.1 µA
0.1
µA
Emitter Cut-Off
I_EBO
Current
0.1
0.1 µA
Collector-Emitter
V_CE(sat)
0.7
0.7 V
Saturation Voltage
1.0
Static Forward
h_FE
Current Transfer
Ratio
100 300 100 300
30
10†
10†
Transition
Frequency
f_T
100
100
MHz
Output Capacitance C_obo
15
15 pF
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
† Typical
CONDITIONS.
I_C=100µA
I_C=10mA*
I_E=100µA
V_CB=140V
V_CB=120V
V_EB=4V
I_C=150mA, I_B=15mA
I_C=200mA, I_B=20mA
I_C=150mA, V_CE=10V*
I_C=200mA, V_CE=1V*
I_C=1A, V_CE=10V*
I_C=50mA, V_CE=10V
f=100MHz
V_CB=10V, f=1MHz
3-179