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| ZTX453_15 Datasheet, PDF (1/2 Pages) Diodes Incorporated – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 Â MARCH 1994
FEATURES
* 100 Volt VCEO
* 1 Amp continuous current
* Ptot = 1 Watt
ZTX452
ZTX453
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
ZTX452 ZTX453
100
120
80
100
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
ZTX452
ZTX453
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO 100
120
Breakdown Voltage
Collector-Emitter
VCEO(sus) 80
100
Sustaining Voltage
Emitter-Base
V(BR)EBO 5
5
Breakdown Voltage
Collector Cut-Off
ICBO
Current
0.1
0.1
Emitter Cut-Off
IEBO
Current
0.1
0.1
Collector-Emitter
VCE(sat)
0.7
0.7
Saturation Voltage
Base-Emitter
VBE(sat)
1.3
1.3
Saturation Voltage
Static Forward
hFE
Current Transfer
Ratio
40 150 40 200
10
10
Transition
Frequency
fT
150
150
Output Capacitance Cobo
15
15
UNIT
V
V
V
µA
µA
µA
V
V
MHz
pF
CONDITIONS.
IC=100µA
IC=10mA*
IE=100µA
VCB=80V
VCB=100V
VEB=4V
IC=150mA, IB=15mA*
IC=150mA, IB=15mA*
IC=150mA, VCE=10V*
IC=1A, VCE=10V*
IC=50mA, VCE=10V
f=100MHz
VCB=10V, f=1MHz
3-177
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