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| ZTX450_15 Datasheet, PDF (1/2 Pages) Diodes Incorporated – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 Â MARCH 1994
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
ZTX450
ZTX451
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
ZTX450 ZTX451
60
80
45
60
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
ZTX450
ZTX451 UNIT
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO 60
80
V
Breakdown Voltage
Collector-Emitter
VCEO(sus) 45
60
V
Sustaining Voltage
Emitter-Base
V(BR)EBO 5
5
V
Breakdown Voltage
Collector Cut-Off
ICBO
Current
0.1
µA
0.1 µA
Emitter Cut-Off
IEBO
Current
0.1
0.1 µA
Collector-Emitter
VCE(sat)
Saturation Voltage
0.25
0.35 V
Base-Emitter
VBE(sat)
1.1
1.1 V
Saturation Voltage
Static Forward
hFE
Current Transfer
Ratio
100 300 50 150
15
10
Transition
Frequency
fT
150
150
MHz
Output Capacitance Cobo
15
15 pF
CONDITIONS.
IC=100µA
IC=10mA*
IE=100µA
VCB=45V
VCB=60V
VEB=4V
IC=150mA, IB=15mA*
IC=150mA, IB=15mA*
IC=150mA, VCE=10V*
IC=1A, VCE=10V*
IC=50mA, VCE=10V
f=100MHz
VCB=10V, f=1MHz
3-175
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