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| ZTX449_15 Datasheet, PDF (1/2 Pages) Diodes Incorporated – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 Â MARCH 1994
FEATURES
* 30 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
ZTX449
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb = 25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 50
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 30
V
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE=100µA, IC=0
Collector Cut-Off
ICBO
Current
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
0.1
µA
10
µA
0.1
µA
0.5 V
1
V
1.25 V
VCB=40V
VCB=40V, Tamb=100°C
VEB=4V, IC=0
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1
V
IC=1A,VCE=2V*
Static Forward Current hFE
70
Transfer Ratio
100
80
40
Transition Frequency fT
150
IC=50mA, VCE=2V*
300
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
15
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3-173
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