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| ZTX415 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR AVALANCHE TRANSISTOR | |||
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NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ZTX415
ISSUE 4 - NOVEMBER 1995
FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns)
* Low inductance package
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
* Suitable for single, series and parallel operation
ABSOLUTE MAXIMUM RATINGS.
C
B
E
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
260
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6
V
Continuous Collector Current
IC
500
mA
Peak Collector Current (Pulse Width=20ns) ICM
60
A
Power Dissipation
Ptot
680
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
V(BR)CES 260
VCEO(sus) 100
V
IC=1mA
Tamb= -55 to +175°C
V
IC=100µA
Emitter-Base
Breakdown Voltage
V(BR)EBO 6
V
IE=10µA
Collector Cut-Off
ICBO
Current
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.1
µA
VCB=180V
10
µA
VCB=180V, Tamb=100°C
0.1
µA
VEB=4V
0.5 V
IC=10mA, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9 V
IC=10mA, IB=1mA*
Current in Second
ISB
15
Breakdown (Pulsed)
25
Static Forward Current hFE
25
Transfer Ratio
A
VC=200V, CCE=620pF
A
VC=250V, CCE=620pF
IC=10mA, VCE=10V*
Transition Frequency fT
40
MHz IC=10mA, VCE=20V
f=20MHz
Collector-Base
Ccb
Capacitance
8
pF
VCB=20V, IE=0
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3-171
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