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| ZTX360 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR | |||
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NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTOR
ISSUE 2 Â MARCH 94
FEATURES
* 40 Volt VCEO
* 1 Amp continuous current
* Fast switching
ZTX360
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
60
40
5
1
500
-55 to +175
UNIT
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Sustaining Voltage
VCEO(SUS) 40
V
IC=10mA, IB=0*
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
ICBO
VCE(sat)
500 nA
300 µA
0.6 V
VCB=40V, IE=0
VCB=40V, IE=0, Tamb=150°C
IC=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.7
1.2 V
IC=500mA, IB=50mA*
Static Forward Current hFE
25
Transfer Ratio
150
IC=500mA, VCE=1V*
Transition Frequency fT
200
MHz IC=50mA, VCE=10V,
f=100MHz
Input Capacitance
Cib
36
50
pF
VEB=0.5V, IC=0, f=1MHz
Output Capacitance
Cob
5.75 10
pF
VCB=10V, IE=0, f=1MHz
Turn-On Time
ton
40
ns
VCC=30V, IC=500mA,
IB(on)=50mA, -VBE(off=) 2V
Turn-Off Time
toff
75
ns
VCC=30V, IC=500mA,
IB(on)=-IB(off)=50mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3-166
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