ZTX327 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR R.F. MEDIUM POWER TRANSISTOR

NPN SILICON PLANAR R.F.
MEDIUM POWER TRANSISTOR
ISSUE 2 – MARCH 94
ZTX327
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_CER
V_EBO
I_C
P_tot
T_j:T_stg
E-Line
TO92 Compatible
VALUE
55
30
55
3.5
400
1.5
-55 to +175
UNIT
V
V
V
V
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
V_(BR)CBO
55
Breakdown Voltage
V
I_C=100µA, I_E=0
Collector-Emitter
V_(BR)CEO(sus)
30
Sustaining Voltage
V_(BR)CER(sus)
55
Emitter-Base
V_(BR)EBO
3.5
Breakdown Voltage
V
IC=5mA, I_B=0
I_C=5mA, R_BE=10Ω
V
I_E=100µA,I_C=0
Collector-Emitter
I_CEO
Cut-Off Current
20
µA
V_CB=45V
Collector-Emitter
Saturation Voltage
Static Forward
Current Transfer
Transitional
Frequency
Output Capacitance
V_CE(SAT)
h_FE
f_T
C_obo
R.F. power output
Efficiency
P_OUT
η
1.0
15
500 800
3.0
350 440
50 70
V
I_C=100mA, I_B.=20mA
I_C=50mA, V_CE=5V
MHz
pF
mW
%
I_C=25mA, V_CE=15V
f=100MHz
V_CE=15V, I_C=25mA
f=100MHz
V_CC=12V, P_IN=80mW
f=400MHz
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