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| ZTX320 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS | |||
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NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTORS
ISSUE 3 Â APRIL 94
FEATURES
* 15 Volt VCEO
* fT=600 MHz
APPLICATIONS
* VHF/UHF operation
ZTX320 ZTX321
ZTX322 ZTX323
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IB
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
30
15
3
100
500
300
-55 to +175
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
Collector-Base Breakdown Voltage
V(BR)CBO 30
Collector-Emitter Sustaining Voltage VCEO(SUS) 15
Emitter-Base Breakdown Voltage
V(BR)EBO
3
Collector Cut-Off Current
ICBO
0.01
Emitter Cut-Off Current
IEBO
0.2
Collector-Emitter ZTX320, ZTX322 VCE(sat)
0.4
Saturation Voltage ZTX323
0.4
ZTX321
0.4
Base-Emitter
ZTX320, ZTX322 VBE(sat)
1.0
Saturation Voltage ZTX323
1.0
ZTX321
1.0
Static Forward
ZTX320, ZTX321 hFE
Current Transfer ZTX322
Ratio
ZTX323
20
300
20
150
100
300
Output Capacitance
Cobo
Input Capacitance
Cibo
Transition Frequency at f=100MHz
fT
1.7
1.6
600
400
Noise Figure
N
6
Power Gain
gpe
typical
15
UNIT
V
V
V
µA
µA
V
V
V
V
V
V
pF
pF
MHz
MHz
dB
dB
CONDITIONS.
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=15V, IE=0
VEB=2V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=1mA
IC=3mA, IB=0.3mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
IC=3mA, IB=0.3mA
IC=3mA, VCE=1V
IC=3mA, VCE=1V
IC=3mA, VCE=1V
VCB=10V, f=1MHz
VEB=0.5V, f=1MHz
IC=4mA, VCE=10V
IC=30mA, VCE=10V
IE=1mA, VCE=6V
RS=400â¦, f=60MHz
IC=6mA, VCB=12V
f=200MHz
3-159
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