ZHCS756 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”

SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 1- NOVEMBER 1997 7
FEATURES:
• Low V_F
1
• High Current Capability
APPLICATIONS:
• DC - DC converters
• Mobile telecomms
• PCMCIA
PARTMARK DETAIL: S76
3
ZHCS7 5 6
C
2
1
A
3
SOT2 3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ I_F = 750mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current t≤100µs
t≤1 0 ms
Power Dissipation at T_amb= 25° C
Storage Temperature Range
Junction Temperature
SYMBOL
V_R
I_F
V_F
I_FAV
I_FSM
P_tot
T_stg
T_j
VALUE
60
750
610
1500
12
5
500
-55 to + 150
125
UNIT
V
mA
mV
mA
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25° C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V_(BR)R
Voltage
60
80
V
I_R= 300µA
Forward Voltage
V_F
Reverse Current
I_R
250 290 mV I_F= 50mA*
285 330 mV I_F= 100mA*
350 410 mV I_F= 250mA*
440 500 mV I_F= 500mA*
520 610 mV I_F= 750mA*
600 700 mV I_F= 1000mA*
760 900 mV I_F= 1500mA*
50
100
µA
V_R= 45V
Diode Capacitance C_D
17
pF
f= 1MHz,V_R= 25V
Reverse Recovery
t_rr
Time
12
ns
switched from
I_F = 500mA to I_R = 500mA
Measured at I_R = 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2% .