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| ZHCS750 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” | |||
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SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE âSuperBATâ
ZHCS7 5 0
ISSUE 2 - October 1997
7
FEATURES:
*
Low VF
*
High Current Capability
APPLICATIONS:
*
DC - DC converters
*
Mobile telecomms
*
PCMCIA
PARTMARK DETAIL: ZS7
ABSOLUTE MAXIMUM RATINGS.
1
C
2
1
A
3
3
SOT2 3
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
VR
Forward Current (Continuous)
IF
Forward Voltage @ IF = 750mA
VF
Average Peak Forward Current; D.C. = 50%
IFAV
Non Repetitive Forward Current tâ¤100µs
IFSM
tâ¤1 0 ms
Power Dissipation at Tamb= 25° C
Ptot
Storage Temperature Range
Tstg
Junction Temperature
Tj
40
V
750
mA
490
mV
1500
mA
12
A
5.2
A
500
mW
-55 to + 150
°C
125
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V(BR)R
Voltage
40
60
V
IR= 300µA
Forward Voltage
VF
Reverse Current
IR
225 280 mV IF= 50mA*
235 310 mV IF= 100mA*
290 350 mV IF= 250mA*
340 420 mV IF= 500mA*
390 490 mV IF= 750mA*
440 540 mV IF= 1000mA*
530 650 mV IF= 1500mA*
50
100
µA
VR= 30V
Diode Capacitance CD
25
pF
f= 1MHz,VR= 25V
Reverse Recovery
trr
Time
12
ns
switched from
IF = 500mA to IR = 500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle â¤2% .
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