ZHCS500 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”

SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 1- September 1997 7
FEATURES:
• Low V_F
1
• High Current Capability
APPLICATIONS:
• DC - DC converters
• Mobile telecomms
• PCMCIA
PARTMARK DETAIL: ZS5
3
ZHCS5 0 0
C
2
1
A
3
SOT2 3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ I_F = 500mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current t≤100µs
t≤1 0 ms
Power Dissipation at T_amb= 25° C
Storage Temperature Range
Junction Temperature
SYMBOL
V_R
I_F
V_F
I_FAV
I_FSM
P_tot
T_stg
T_j
VALUE
40
500
550
1000
6.75
3
330
-55 to + 150
125
UNIT
V
mA
mV
mA
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25° C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V_(BR)R
Voltage
40
60
V
I_R= 200µA
Forward Voltage
V_F
270 300 mV I_F= 50mA*
300 350 mV I_F= 100mA*
370 460 mV I_F= 250mA*
465 550 mV I_F= 500mA*
550 670 mV I_F= 750mA*
640 780 mV I_F= 1000mA*
810 1050 mV I_F= 1500mA*
440
mV I_F= 500mA, T_amb= 100° C*
Reverse Current
I_R
15
40
µA
V_R= 30V
Diode Capacitance C_D
20
pF
f= 1MHz,V_R= 25V
Reverse Recovery
t_rr
Time
10
ns
switched from
I_F = 500mA to I_R = 500mA
Measured at I_R = 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2% .