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| ZHCS1000 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT” | |||
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SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE âSuperBATâ
ISSUE 2 - OCTOBER 1997 7
FEATURES:
⢠High current capability
1
⢠Low VF
APPLICATIONS:
⢠Mobile telecomms, PCMIA & SCSI
⢠DC-DC Conversion
PARTMARKING DETAILS : ZS1
3
ABSOLUTE MAXIMUM RATINGS.
ZHCS1 0 0 0
C
2
1
A
3
SOT2 3
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
VR
Forward Current
IF
Forward Voltage @ IF = 1000mA(typ)
VF
Average Peak Forward Current;D.C.= 50%
IFAV
Non Repetitive Forward Current tâ¤100µs
IFSM
tâ¤1 0 ms
Power Dissipation at Tamb= 25° C
Ptot
Storage Temperature Range
Tstg
Junction Temperature
Tj
40
V
1000
mA
425
mV
1750
mA
12
A
5.2
A
500
mW
-55 to + 150
°C
125
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V (BR)R
40
60
V
IR= 300µA
Forward Voltage
VF
240 270 mV
265 290 mV
305 340 mV
355 400 mV
390 450 mV
425 500 mV
495 600 mV
420 â
mV
IF= 50mA*
IF= 100mA*
IF= 250mA*
IF= 500mA*
IF= 750mA*
IF= 1000mA*
IF= 1500mA*
IF= 1000mA,Ta= 100° C
*
Reverse Current
IR
50
100 µA
VR= 30V
Diode Capacitance
CD
25
pF
f= 1MHz,VR= 25V
Reverse Recovery
trr
Time
12
ns
switched from
IF = 500mA to IR =
500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs. Duty cycle â¤2%
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