ZABG4002 Datasheet, PDF (1/7 Pages) Diodes Incorporated – LOW POWER 4 STAGE FET LNA BIAS CONTROLLER

A Product Line of
Diodes Incorporated
ZABG4002
LOW POWER 4 STAGE FET LNA BIAS CONTROLLER
Summary
The ZABG4002 is a four stage depletion mode FET bias controller intended primarily for satellite Low Noise Block’s (LNB’s), but
its also suitable for other LNA applications such as those in found in PMR’s and microwave links. The ZABG4002 provides each
FET with an independent protected negative gate voltage and positive drain voltage with user programmable drain current.
Combining an advanced IC process and packaging techniques, the ZABG4002 helps minimise power consumption, component
cost and PCB area whilst enhancing overall reliability.
Features
• Four stage FET bias controller
• Operating range of 3.0V to 8.0V
• Low quiescent supply current, 1.2mA typical
• FET drain voltages set at 2.0V
• FET drain current selectable from 0 to 15mA
• Switchable FETs for power management
• Allows first and second stage FETs to be run at different
(optimum) drain currents
• FET drain voltages and currents held stable over
temperature and Vcc variations
• FETs protected against overstress during power-up and
power-down.
• Internal negative supply generator allowing single supply
operation (available for external use)
• Low external component count
Pin Assignments
D2
G2
V_CC
GND
Top View
C_SUB
G3
D4
G4
R_CAL1
Applications
• Twin LNB’s
• Quad LNB’s
• US LNB’s
• Microwave links
• PMR and Cellular telephone systems
Bottom View
Single Universal LNB System Diagram
Gain stages
GaAs FET’s
Down
Converter
IF Switching, gain
and control
ZABG
46002
ZXHF
5002
ZABG4002
Document number: DS32047 Rev. 2 - 2
1 of 7
www.diodes.com
February 2010
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