UMG4N Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL NPN PRE-BIASED TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Surface Mount Package Suited for Automated Assembly
• Simplifies Circuit Design and Reduces Board Space
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-353
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin Annealed Over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.006 grams (approximate)
UMG4N
DUAL NPN PRE-BIASED TRANSISTOR
321
SOT-353
(3) (2) (1)
R1
R1
4
5
TOP VIEW
(4)
(5)
Schematic and Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
50
50
5
100
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation @T_A = 25°C (Note 3)
Thermal Resistance, Junction to Ambient Air @T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_j, T_STG
Value
150
833
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Gain
Gain-Bandwidth Product (Note 4)
Input Resistance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(SAT)
h_FE
f_T
R₁
Min
50
50
5.0
⎯
⎯
⎯
100
⎯
7
Typ Max Unit
Test Condition
⎯
⎯
V I_C = 50μA, I_E = 0
⎯
⎯
V I_C = 1mA, I_B = 0
⎯
⎯
V I_E = 50μA, I_C = 0
⎯
0.5
μA V_CB = 50V, I_E = 0
⎯
0.5
μA V_EB = 4V, I_C = 0
⎯
0.3
V I_C = 10mA, I_B = 1mA
330 600
⎯ V_CE = 5V, I_C = 1mA
250
⎯
MHz V_CE = 10V, I_E = -5mA, f = 100MHz
10
13
kΩ
⎯
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
4. Characteristics of transistor. For reference only.
DS31207 Rev. 3 - 2
1 of 3
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UMG4N
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