SDM10U45 Datasheet, PDF (1/2 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

SPICE MODEL: SDM10U45
SDM10U45
Pb
Lead-free SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
• Low Forward Voltage Drop
• Guard Ring Die Construction for
Transient Protection
• Ideal for low logic level applications
• Low Capacitance
• Lead Free By Design/RoHS Compliant (Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOD-523
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
MARKING CODE
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: Cathode Band
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Code: LJ
• Ordering Information: See Last Page
• Weight: 0.002 grams (approximate)
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Maximum Peak Reverse Voltage
Reverse Voltage
RMS Reverse Voltage
Average Forward Current
Maximum (Peak) Forward Current
Non-Repetitive Peak Forward Surge Current @ t ≤ 10ms
Operating and Storage Temperature Range
Symbol
V_RM
V_R
V_R(RMS)
IO
I_FM
IFSM
T_j, T_STG
CATHODE MARK
SOD-523
Dim Min Max
A
1.50 1.70
B
1.10 1.30
C
0.25 0.35
D
0.70 0.90
E
0.10 0.20
C
E
G
0.55 0.65
D
G
All Dimensions in mm
Value
Unit
45
V
40
V
28
V
100
mA
300
mA
1
A
-40 to +125
°C
Thermal Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Power Dissipation (Note 2)
Thermal Resistance, Ambient Air (Note 2)
Symbol
Pd
R_θJA
Value
150
667
Unit
mW
°C/W
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 3)
Forward Voltage Drop
Reverse Current (Note 3)
Total Capacitance
Symbol Min
Typ
Max
V_(BR)R
30


280

VF

360

470
550
580
800
IR


1.0
C_T

7
15
Note:
1. No purposefully added lead.
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration pulse test used so as to minimize self-heating effect.
Unit
V
mV
µA
pF
Test Conditions
I_R = 100µA
I_F = 1.0mA
I_F = 15mA
I_F = 50mA
I_F = 100mA
VR = 25V
V_R = 10V, f = 1.0 MHz
DS30394 Rev. 6 - 2
1 of 2
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