SD103A Datasheet, PDF (1/3 Pages) Semtech Corporation – Silicon Schottky Barrier Diodes for general purpose applications

SD103A - SD103C
SCHOTTKY BARRIER DIODE
Features
· Low Forward Voltage Drop
· Guard Ring Construction for Transient
Protection
· Low Reverse Recovery Time
· Low Reverse Capacitance
Mechanical Data
· Case: DO-35, Glass
· Leads: Solderable per MIL-STD-202,
Method 208
· Marking: Type Number
· Polarity: Cathode Band
· Weight: 0.13 grams (approx.)
A
B
A
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
@ t £ 1.0s
Non-Repetitive Peak Forward Surge Current
8.3 ms Half Sine Wave
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating Junction Temeperature
Storage Temperature Range
Symbol
V_RRM
VRWM
V_R
V_R(RMS)
I_FM
IFRM
I_FSM
P_d
RqJA
T_j
T_STG
SD103A
40
28
SD103B
30
21
350
1.0
15
400
300
125
-55 to +150
SD103C
20
14
Unit
V
V
mA
A
A
mW
K/W
°C
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage
Maximum Forward Voltage Drop
Maximum Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Symbol Min
Typ
Max Unit
Test Condition
SD103A
40
SD103B V(BR)R
30
¾
¾
V
I_RS = 100mA (pulsed)
SD103C
20
VFM
¾
¾
0.37
0.60
V
IF = 20mA
I_F = 200mA
SD103A
VR = 30V
SD103B IRM
¾
¾
5.0
mA VR = 20V
SD103C
V_R = 10V
C_j
¾
50
¾
pF VR = 0V, f = 1.0MHz
t_rr
¾
10
¾
ns
IF = IR = 50mA to 200mA,
I_rr = 0.1 x I_R, R_L = 100W
DS11009 Rev. 11 - 2
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SD103A - SD103C