SD101A Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Schottky Barrier Diodes for general purpose applications

SD101A - SD101C
SCHOTTKY BARRIER DIODE
Features
· Low Forward Voltage Drop
· Guard Ring Construction for Transient
Protection
· Low Reverse Recovery Time
· Low Reverse Capacitance
Mechanical Data
· Case: DO-35, Plastic
· Leads: Solderable per MIL-STD-202,
Method 208
· Marking: Type Number
· Polarity: Cathode Band
· Weight: 0.13 grams (approx.)
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s
@ t = 10ms
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_FSM
P_d
R_qJA
T_j, T_STG
A
B
A
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
SD101A
60
42
SD101B
50
35
15
50
2.0
400
375
-65 to +175
SD101C
Unit
40
V
28
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Maximum Forward Voltage Drop
Maximum Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Symbol
Min
SD101A
SD101B
SD101C
SD101A
V_FM
¾
SD101B
SD101C
SD101A
SD101B
I_RM
¾
SD101C
SD101A
SD101B
C_j
¾
SD101C
t_rr
¾
Max
0.41
0.40
0.39
1.00
0.95
0.90
200
2.0
2.1
2.2
1.0
Note: 1. Valid provided that leads are kept at ambient temperature.
Unit
V
nA
pF
ns
Test Condition
IF = 1.0mA
I_F = 1.0mA
I_F = 1.0mA
I_F = 15mA
I_F = 15mA
I_F = 15mA
VR = 50V
V_R = 40V
V_R = 30V
VR = 0V, f = 1.0MHz
IF = IR = 5.0mA,
I_rr = 0.1 x I_R, R_L = 100W
DS11008 Rev. I-2
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SD101A - SD101C