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| SBR3U100LP Datasheet, PDF (1/3 Pages) Diodes Incorporated – 3A SBR® SUPER BARRIER RECTIFER | |||
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SBR3U100LP
3A SBR®
SUPER BARRIER RECTIFER
Features
⢠Ultra Low Forward Voltage Drop
⢠Superior Reverse Avalanche Capability
⢠Patented Super Barrier Rectifier Technology
⢠Soft, Fast Switching Capability
⢠150ºC Operating Junction Temperature
⢠Lead Free Finish, RoHS Compliant (Note 1)
⢠âGreenâ Molding Compound Device (Note 2)
Mechanical Data
⢠Case: DFN3030-8
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020D
⢠Terminals: Finish â NiPdAu annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 3
⢠Ordering Information: See Page 3
⢠Weight: 0.0172 grams (approximate)
CC CC
C = CATHODE
A = ANODE
AA A A
Bottom View
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
100
V
VRM
RMS Reverse Voltage
VR(RMS)
70
V
Average Rectified Output Current
IO
3.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
32
A
Thermal Characteristics
Characteristic
Maximum Thermal Resistance
Thermal Resistance Junction to Ambient (Note 3) TA = 25ºC
Operating and Storage Temperature Range
Symbol
RθJA
TJ, TSTG
Value
61
-65 to +150
Unit
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (Note 4)
V(BR)R
100
-
-
V
Forward Voltage
-
0.44
0.48
VF
-
-
0.67
0.71
0.42
0.45
V
-
0.58
0.61
Reverse Current (Note 4)
IR
-
-
16
200
µA
3
15
mA
Notes:
1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
2. Diodes Inc.âs âGreenâ policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
3. Device mounted on Polyimide substrate, 2 oz. Copper, 75mm2 pad area, double side PCB.
4. Short duration pulse test used to minimize self-heating effect.
Test Condition
IR = 1mA
IF = 1.0A, TJ = 25ºC
IF = 3.0A, TJ = 25ºC
IF = 1.0A, TJ = 125ºC
IF = 3.0A, TJ = 125ºC
VR = 100V, TJ = 25ºC
VR = 100V, TJ = 125ºC
SBR is a registered trademark of Diodes Incorporated.
SBR3U100LP
Document number: DS30998 Rev. 4 - 2
1 of 3
www.diodes.com
March 2008
© Diodes Incorporated
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