SBM540 Datasheet, PDF (1/3 Pages) Diodes Incorporated – 5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

SBM540
5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
Features
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: POWERMITEâ3, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Moisture sensitivity: Level 1 per J-STD-020A
· Polarity: See Diagram
· Marking: Type Number, See also Sheet 3
· Weight: 0.072 grams (approx.)
· Ordering Information, See Sheet 3
A
E
P
G
3
JH
B
1
2
D
C
C
M
K
L
Note:
PIN 1
PIN 2
PIN 3, BOTTOMSIDE
HEAT SINK
Pins 1 & 2 must be electrically
connected at the printed circuit board.
POWERMITEâ3
Dim Min Max
A
4.03 4.09
B
6.40 6.61
C
.889 NOM
D
1.83 NOM
E
1.10 1.14
G
.178 NOM
H
5.01 5.17
J
4.37 4.43
K
.178 NOM
L
.71
.77
M
.36
.46
P
1.73 1.83
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (see also Figure 5)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
@ TC = 90°C
Typical Thermal Resistance Junction to Soldering Point
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
V_RWM
VR
VR(RMS)
IO
IFSM
RqJS
Tj
TSTG
Value
40
28
5
100
3.2
-55 to +125
-55 to +150
Unit
V
V
A
A
°C/W
°C
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Reverse Current (Note 1)
Total Capacitance
Symbol
V_(BR)R
V_FM
IRM
C_T
Min Typ Max Unit
Test Condition
40
¾
¾
V IR = 0.5mA
¾
0.48 0.52
I_F = 5A, T_S = 25°C
¾
0.45
¾
¾
0.59
¾
V
IF = 5A, TS = 125°C
I_F = 10A, T_S = 25°C
¾
0.56
¾
I_F = 10A, T_S = 125°C
¾
¾
0.05
2.5
0.5
20
mA
T_S = 25°C, V_R = 40V
TS = 100°C, VR = 40V
¾
250
¾
pF f = 1.0MHz, VR = 4.0V DC
Notes: 1. Short duration test pulse used to minimize self-heating effect.
DS30297 Rev. 3 - 2
1 of 3
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SBM540