SB170_15 Datasheet, PDF (1/2 Pages) Diodes Incorporated – 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for Transient Protection
· Ideally Suited for Automatic Assembly
· Low Power Loss, High Efficiency
· Surge Overload Rating to 25A Peak
· For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
· High Temperature Soldering: 260°C/10 Second at Terminal
· Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
· Case: DO-41
· Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Finish ¾ Bright Tin. Plated Leads - Solderable per
MIL-STD-202, Method 208
· Polarity: Cathode Band
· Mounting Position: Any
· Ordering Information: See Last Page
· Marking: Type Number
· Weight: 0.3 grams (approximate)
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.4
¾
B
4.1
5.2
C
0.71
0.86
D
2.0
2.7
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TT = 85°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ I_F = 1.0A
@ T_A = 25°C
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
@ TA = 25°C
@ T_A = 100°C
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_RRM
V_RWM
VR
V_R(RMS)
IO
I_FSM
VFM
IRM
C_j
RqJL
R_qJA
T_j, T_STG
SB170
70
49
SB180
SB190
80
90
56
63
1.0
25
0.80
0.5
10
80
15
50
-65 to +125
SB1100
100
70
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
Unit
V
V
A
A
V
mA
pF
K/W
K/W
°C
DS30116 Rev. 3 - 1
1 of 2
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SB170 - SB1100
ã Diodes Incorporated