RB721Q-40 Datasheet, PDF (1/3 Pages) Diodes Incorporated – Schottky barrier diode

Diodes
Schottky barrier diode
RB721Q-40
RB721Q-40
!Applications
High speed switching
!Features
1) Glass-sealed envelope for high reliability. (MSD)
2) Small pitch enables insertion on PCBs.
3) Low VF and low IR.
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
CATHODE BAND (BLACK)
φ0.4±0.1
29±1
2.7±0.3
29±1
φ1.8±0.2
ROHM : MSD
EIAJ : −
JEDEC : DO-34
S
Product identification number 2_−
is stamped on body of main unit.
!Absolute maximum ratings (Ta=25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current^∗
Junction temperature
Storage temperature
∗ 60 Hz for 1
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Limits
Unit
40
V
40
V
30
mA
200
mA
125
°C
−40~+125
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF
−
−
0.37
V
IF=1mA
Reverse current
IR
−
−
0.5
µA VR=25V
Capacitance between terminals
CT
−
2.0
−
pF VR=1V, f=1MHz
Note) ESD sensitive product handling required.