RB557W Datasheet, PDF (1/4 Pages) Diodes Incorporated – Schottky barrier diode

Diodes
Schottky barrier diode
RB557W
RB557W
zApplications
General rectification
zFeatures
1) Ultra small mold type. (EMD3)
2) Low VF
3) High reliability
zConstruction
Silicon epitaxial planar
zDimensions (Unit : mm)
zLand size figure (Unit : mm)
1.6±0.2
0.3±0.1
　　　 0.05
(3)
0.15±0.05
0.5 0.5
0.7
0.2±0.1
(2)
(1)
　　-0.05
0.5 0.5
1.0±0.1
0～0.1
0.55±0.1
0.7±0.1
0.6 0.6
EMD3
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
zStructure
zTaping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.1
　　　　　 0
0.3±0.1
1.8±0.1
φ0.5±0.1
0.9±0.2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
V_R
30
V
Average rectified forward current（*1）
Io
100
mA
Forward current surge peak （60Hz・1cyc）（*1）
I_FSM
500
mA
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
(*1) Rating of per diode
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
V_F1
-
- 0.35
V_F2
-
- 0.49
I_R
-
-
10
Unit
Conditions
V
I_F=10mA
V
I_F=100mA
µA
V_R=10V
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