RB050PS-30 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB050PS-30
zApplications
Rectifying small power
zFeatures
1) High power mold type.
(TSOP8)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
(8)
(7) (6)
(5)
1pin mark
φ1.4
①
0～0.1
(1)
(2)
(3) (4)
1.1
＋0.1
0.4－0.05
1.27 0.635
5±0.1
0.
22
＋0.1
－0.05
0.9±0.05
3.9
ROHM : TSOP8
① Manufacture Date
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
RB050PS-30
zLand size figure
4.56
1.27
0.75
TSOP8
zStructure
φ1.55±0.1
　　　　　 0
0.37±0.1
6.4±0.1
1PIN
8.0±0.1
φ1.55±0.05
1.2±0.2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
30
V
Reverse voltage (DC)
V_R
30
V
Average rectified forward current (*1)
Io
3
A
Forward current surge peak (60Hz・1cyc)
I_FSM
35
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-40 to +150
℃
(*1)Tc=100℃max
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
- 0.425
I_R
-
-
200
Unit
Conditions
V
I_F=3.0A
µA
V_R=30V
Rev.A
1/3