QSBT40_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – QUAD DATA LINE SCHOTTKY BUS TERMINATOR

SPICE MODEL: QSBT40
QSBT40
Lead-free
QUAD DATA LINE SCHOTTKY BUS TERMINATOR
Features
· Low Forward Voltage Drop
· Fast Switching
· Very High Density
· Ultra-Small Surface Mount Package PN Junction Guard Ring
for Transient and ESD Protection
· Provide transient protection for high-speed data lines in
accordance with:
IEC61000-4-2 (ESD) 15kV (Air), 8kV (Contact)
IEC61000-4-4 (EFT) 80A (tp = 5/50 ns)
IEC61000-4-5 (Lightning) Class 3
· Lead Free/RoHS Compliant (Note 5)
K
Mechanical Data
· Case: SOT-363
J
· Case material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Solderable per MIL-STD-202, Method 208
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Please See Ordering Information, Note 7, on
Page 2
· Polarity: See Diagram
· Marking Code: KST (See Page 2)
· Weight: 0.006 grams (approx.)
A
TOP VIEW
BC
G
H
DF
DL1 ^VCC
L
DL2
DL4 GND DL3
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
M
H
1.80 2.20
J
¾
0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t < 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
V_RRM
V_RWM
VR
I_FM
I_FSM
P_d
R_qJA
T_j
T_STG
Value
30
200
600
200
625
-55 to +125
-65 to +125
Unit
V
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol Min
V(BR)R
30
V_F
¾
I_R
¾
C_T
¾
t_rr
¾
Typ
¾
¾
¾
10.0
6.5
¾
Max
¾
280
350
450
550
1000
2
¾
5.0
Unit
V
mV
mA
pF
ns
Test Condition
I_R = 100mA
IF = 0.1mA, tp < 300µS
I_F = 1.0mA, tp < 300µS
I_F = 10mA, tp < 300µS
I_F = 30mA, tp < 300µS
I_F = 100mA, tp < 300µS
VR = 25V
VR = 0, f = 1.0MHz (Note 3)
V_R = 0, f = 1.0MH_Z (Note 4)
IF = IR = 10mA,
I_rr = 0.1 x I_R, R_L = 100W
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. At VR = 0V, DL(X) to VCC or GND.
4. At VR = 0V, between Data Lines (e.g., DL1 and DL4).
5. No purposefully added lead.
DS30195 Rev. 12 - 2
1 of 3
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QSBT40
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