QSBT40_08 Datasheet, PDF (1/3 Pages) Diodes Incorporated – QUAD DATA LINE SCHOTTKY BUS TERMINATOR

Features
• Low Forward Voltage Drop
• Fast Switching
• Very High Density
• Ultra-Small Surface Mount Package PN Junction Guard Ring
for Transient and ESD Protection
• Provide Transient Protection for High-Speed Data Lines in
Accordance With:
IEC61000-4-2 (ESD) 15kV (Air), 8kV (Contact)
IEC61000-4-4 (EFT) 80A (tp = 5/50 ns)
IEC61000-4-5 (Lightning) Class 3
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
QSBT40
QUAD DATA LINE SCHOTTKY BUS TERMINATOR
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Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208
• Polarity: See Diagram
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.006 grams (approximate)
DL1 ^VCC DL2
Top View
DL4 GND DL3
Device Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
30
V
V_R
Forward Continuous Current
(Note 1)
I_FM
200
mA
Non-Repetitive Peak Forward Surge Current
@ t < 1.0s
I_FSM
600
mA
Thermal Characteristics
Power Dissipation
Characteristic
Thermal Resistance Junction to Ambient Air
Operating Temperature Range
Storage Temperature Range
(Note 1)
(Note 1)
Symbol
P_D
R_θJA
T_J
T_STG
Value
200
625
-55 to +125
-65 to +125
Unit
mW
°C/W
°C
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol Min
(Note 5) V_(BR)R 30
V_F
⎯
(Note 5)
I_R
⎯
C_T
⎯
t_rr
⎯
Typ
⎯
⎯
⎯
10.0
6.5
⎯
Max
⎯
280
350
450
550
1000
2
⎯
5.0
Unit
V
mV
μA
pF
ns
Test Condition
I_R = 100μA
I_F = 0.1mA, tp < 300µS
I_F = 1.0mA, tp < 300µS
I_F = 10mA, tp < 300µS
I_F = 30mA, tp < 300µS
I_F = 100mA, tp < 300µS
V_R = 25V
V_R = 0, f = 1.0MH (Note 6)
V_R = 0, f = 1.0MH_Z (Note 7)
I_F = I_R = 10mA,
I_rr = 0.1 x I_R, R_L = 100Ω
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
6. At V_R = 0V, DL(X) to V_CC or GND.
7. At V_R = 0V, between Data Lines (e.g., DL1 and DL4).
QSBT40
Document number: DS30195 Rev. 15 - 2
1 of 3
www.diodes.com
May 2008
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