MMSTA92_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMSTA92
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
A
• Complementary NPN Type Available (MMSTA42)
C
• Ideal for Low Power Amplification and Switching
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Notes 3 and 4)
Mechanical Data
BC
B
E
G
• Case: SOT-323
H
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
K
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
J
DE
L
• Terminals: Solderable per MIL-STD-202, Method 208
C
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
B
E
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
M
H
1.80 2.20
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.18
α
0°
8°
All Dimensions in mm
Value
-300
-300
-5.0
-100
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(SAT)
V_BE(SAT)
C_cb
f_T
Min
-300
-300
-5.0
⎯
⎯
25
40
25
⎯
⎯
⎯
50
Max
⎯
⎯
⎯
-250
-100
⎯
-0.5
-0.9
6.0
⎯
Unit
Test Condition
V I_C = -100μA, I_E = 0
V I_C = -1.0mA, I_B = 0
V I_E = -100μA, I_C = 0
nA V_CB = -200V, I_E = 0
nA V_CE = -3.0V, I_C = 0
I_C = -1.0mA, V_CE = -10V
⎯ I_C = -10mA, V_CE = -10V
I_C = -30mA, V_CE = -10V
V I_C = -20mA, I_B = -2.0mA
V I_C = -20mA, I_B = -2.0mA
pF
MHz
V_CB = -20V, f = 1.0MHz, I_E = 0
V_CE = -20V, I_C = -10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30174 Rev. 9 - 2
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MMSTA92
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