MMSTA42_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMSTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMSTA92)
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Marking Information: K3M, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
A
C
BC
B
E
G
H
K
J
DE
L
C
B
E
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
M
H
1.80 2.20
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M 0.10 0.18
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
Value
300
300
6.0
200
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(SAT)
V_BE(SAT)
C_cb
f_T
Min
300
300
6.0
⎯
⎯
25
40
40
⎯
⎯
⎯
50
Max
⎯
⎯
⎯
100
100
⎯
0.5
0.9
3.0
⎯
Unit
Test Condition
V I_C = 100μA, I_E = 0
V I_C = 1.0mA, I_B = 0
V I_E = 100μA, I_C = 0
nA V_CB = 200V, I_E = 0
nA V_CE = 6.0V, I_C = 0
I_C = 1.0mA, V_CE = 10V
⎯ I_C = 10mA, V_CE = 10V
I_C = 30mA, V_CE = 10V
V I_C = 20mA, I_B = 2.0mA
V I_C = 20mA, I_B = 2.0mA
pF
MHz
V_CB = 20V, f = 1.0MHz, I_E = 0
V_CE = 20V, I_C = 10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30175 Rev. 10 - 2
1 of 3
www.diodes.com
MMSTA42
© Diodes Incorporated