MMSTA05_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMSTA05/MMSTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available
(MMSTA55/MMSTA56)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• MMSTA05 Marking K1H, K1G (See Page 3)
• MMSTA06 Marking K1G (See Page 3)
• Order & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
A
C
BC
B
E
G
H
K
J
DE
L
C
B
E
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
M
H
1.80 2.20
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.18
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
MMSTA05
MMSTA06
60
80
60
80
4.0
500
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 5)
Symbol
Min
MMSTA05
MMSTA06
V_(BR)CBO
60
80
MMSTA05
MMSTA06
V_(BR)CEO
60
80
V_(BR)EBO
4.0
MMSTA05
MMSTA06
I_CBO
⎯
MMSTA05
MMSTA06
I_CES
⎯
DC Current Gain
h_FE
100
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
V_CE(SAT)
⎯
V_BE(SAT)
⎯
f_T
100
Max
⎯
⎯
⎯
100
100
⎯
0.25
1.2
⎯
Unit
Test Condition
V
I_C = 100μA, I_E = 0
V
I_C = 1.0mA, I_B = 0
V
I_E = 100μA, I_C = 0
nA
V_CB = 60V, I_E = 0
V_CB = 80V, I_E = 0
nA
V_CE = 60V, I_BO = 0V
V_CE = 80V, I_BO = 0V
⎯
I_C = 10mA, V_CE = 1.0V
I_C = 100mA, V_CE = 1.0V
V
I_C = 100mA, I_B = 10mA
V
I_C = 100mA, V_CE = 1.0V
MHz V_CE = 2.0V, I_C = 10mA, f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30168 Rev. 9 - 2
1 of 3
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