MMST6427_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

MMST6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• High Current Gain
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification Rating
94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Marking Information: K1D - See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
A
C
BC
B
E
G
H
K
J
DE
L
C
B
E
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G 1.20 1.40
H
1.80 2.20
M
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M 0.10 0.18
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
Value
40
40
12
500
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Symbol Min
Max Unit
Test Condition
V_(BR)CBO
40
V_(BR)CEO
40
V_(BR)EBO
12
I_CBO
⎯
I_CEO
⎯
I_EBO
⎯
⎯
V I_C = 100μA, I_E = 0
⎯
V I_C = 100mA, I_B = 0
⎯
V I_E = 10μA, I_C = 0
50
nA V_CB = 30V, I_E = 0
1.0
μA V_CE = 25V, I_B = 0
50
nA V_EB = 10V, I_C = 0
h_FE
V_CE(SAT)
V_BE(SAT)
V_BE(ON)
10,000
20,000
14,000
⎯
⎯
⎯
100,000
200,000
140,000
1.2
1.5
2.0
1.75
I_C = 10mA, V_CE = 5.0V
⎯ I_C = 100mA, V_CE = 5.0V
I_C = 500mA, V_CE = 5.0V
V ^{IC = 50mA, IB = 0.5mA}
I_C = 500mA, I_B = 0.5mA
V I_C = 500mA, I_B = 0.5mA
V I_C = 50mA, V_CE =5.0V
C_obo
C_ibo
8.0 Typical
15 Typical
pF V_CB = 10V, f = 1.0MHz, I_E = 0
pF V_EB = 0.5V, f = 1.0MHz, I_C = 0
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Code
0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30166 Rev. 10 - 2
1 of 3
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MMST6427
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