MMST5551_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMST5551
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMST5401)
• Ideal for Low Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Marking Information: K4N, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
A
C
BC
B
E
G
H
K
J
DE
L
C
B
E
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
H
1.80 2.20
M
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M 0.10 0.18
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
Value
180
160
6.0
200
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(SAT)
V_BE(SAT)
C_obo
h_fe
f_T
NF
Min Max
180 ⎯
160 ⎯
6.0 ⎯
⎯ 50
⎯ 50
80 ⎯
80 250
30 ⎯
⎯
0.15
0.20
⎯ 1.0
⎯ 6.0
50 250
100 300
⎯ 8.0
Unit
Test Condition
V I_C = 100μA, I_E = 0
V I_C = 1.0mA, I_B = 0
V I_E = 10μA, I_C = 0
nA V_CB = 120V, I_E = 0
μA V_CB = 120V, I_E = 0, T_A = 100°C
nA V_EB = 4.0V, I_C = 0
I_C = 1.0mA, V_CE = 5.0V
⎯ I_C = 10mA, V_CE = 5.0V
I_C = 50mA, V_CE = 5.0V
V ^{IC = 10mA, IB = 1.0mA}
I_C = 50mA, I_B = 5.0mA
V ^{IC = 10mA, IB = 1.0mA}
I_C = 50mA, I_B = 5.0mA
pF
⎯
MHz
dB
V_CB = 10V, f = 1.0MHz, I_E = 0
V_CE = 10V, I_C = 1.0mA, f = 1.0kHz
V_CE = 10V, I_C = 10mA, f = 100MHz
V_CE = 5.0V, I_C = 200μA, R_S = 1.0kΩ, f = 1.0kHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30173 Rev. 8 - 2
1 of 3
www.diodes.com
MMST5551
© Diodes Incorporated