MMST4126_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMST4126
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (MMST4124)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
A
C
BC
B
E
G
H
K
J
DF
L
C
B
E
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
M
H
1.80 2.20
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.18
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
Value
-25
-25
-4.0
-200
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(SAT)
V_BE(SAT)
C_obo
C_ibo
h_fe
f_T
NF
Min Max Unit
Test Condition
-25
⎯
-25
⎯
-4.0
⎯
⎯
-50
⎯
-50
V I_C = -10μA, I_E = 0
V I_C = -1.0mA, I_B = 0
V I_E = -10μA, I_C = 0
nA V_CB = -20V, I_E = 0V
nA V_EB = -3.0V, I_C = 0V
120 360
60
⎯
⎯ -0.40
⎯ -0.95
⎯ ^{IC = -2.0mA, VCE = -1.0V}
I_C = -50mA, V_CE = -1.0V
V I_C = -50mA, I_B = -5.0mA
V I_C = -50mA, I_B = -5.0mA
⎯
4.5
pF V_CB = -5.0V, f = 1.0MHz, I_E = 0
⎯
10
pF V_EB = -0.5V, f = 1.0MHz, I_C = 0
120 480
⎯ V_CE = 1.0V, I_C = -2.0mA, f = 1.0kHz
250
⎯
MHz V_CE = -20V, I_C = -10mA, f = 100MHz
⎯
4.0
dB ^{VCE = -5.0V, IC = -100μA,}
R_S = 1.0kΩ, f = 1.0kHz
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30161 Rev. 7 - 2
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MMST4126
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