MMDT4124_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMDT4126)
• Ideal for Medium Power Amplification and Switching
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Notes 5 and 6)
MMDT4124
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
C₂
B₁
E₁
Top View
E₂
B₂
C₁
Device Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V_CBO
30
V
Collector-Emitter Voltage
V_CEO
25
V
Emitter-Base Voltage
V_EBO
5.0
V
Collector Current – Continuous
(Note 1)
I_C
200
mA
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
(Notes 1 & 2)
(Note 1)
Symbol
P_D
R_θJA
T_J, T_STG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol Min
V_(BR)CBO
30
V_(BR)CEO
25
V_(BR)EBO 5.0
I_CBO
⎯
I_EBO
⎯
h_FE
V_CE(SAT)
V_BE(SAT)
120
60
⎯
⎯
C_obo
⎯
C_ibo
⎯
h_fe
120
f_T
300
NF
⎯
Max
⎯
⎯
⎯
50
50
360
⎯
0.30
0.95
4.0
8.0
480
⎯
5.0
Unit
Test Condition
V I_C = 10μA, I_E = 0
V I_C = 1.0mA, I_B = 0
V I_E = 10μA, I_C = 0
nA V_CB = 20V, I_E = 0V
nA V_EB = 3.0V, I_C = 0V
⎯
I_C = 2.0mA, V_CE = 1.0V
I_C = 50mA, V_CE = 1.0V
V I_C = 50mA, I_B = 5.0mA
V I_C = 50mA, I_B = 5.0mA
pF
pF
⎯
MHz
dB
V_CB = 5.0V, f = 1.0MHz, I_E = 0
V_EB = 0.5V, f = 1.0MHz, I_C = 0
V_CE = 1.0V, I_C = 2.0mA, f = 1.0kHz
V_CE = 20V, I_C = 10mA, f = 100MHz
V_CE = 5.0V, I_C = 100μA,
R_S = 1.0kΩ, f = 1.0kHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMDT4124
Document number: DS30164 Rev. 10 - 2
1 of 3
www.diodes.com
January 2009
© Diodes Incorporated