MMBTH24_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SURFACE MOUNT VHF/UHF TRANSISTOR

SPICE MODEL: MMBTH24
MMBTH24
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Features
• Designed for VHF/UHF Amplifier Applications and High
Output VHF Oscillators
• High Current Gain Bandwidth Product
• Ideal for Mixer and RF Amplifier Applications with
collector currents in the 100μA - 30 mA Range
• Lead Free/RoHS Compliant (Note 3)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
C
B
E
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K
0.903 1.10
L
0.45 0.61
M
0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
Value
40
40
4.0
50
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
V_(BR)CEO
40
⎯
V
I_C = 1mA, I_BB = 0
V_(BR)CBO
40
⎯
V I_C = 100μA, I_E = 0
V_(BR)EBO
4.0
⎯
V I_E = 10μA, I_C = 0
I_CBO
⎯
100
nA V_CB = 30V, I_E = 0
I_EBO
⎯
100
nA V_EB = 2V, I_C = 0
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
h_FE
30
V_CE(SAT)
⎯
V_BE(SAT)
⎯
⎯
0.5
0.95
⎯ IC = 8mA, VCE = 10.0V
V I_C = 4mA, I_BB = 400μA
V I_C = 4mA, V_CE = 10.0V
Current Gain-Bandwidth Product
Collector-Base Capacitance
Collector-Base Feedback Capacitance
Collector-Base Time Constant
f_T
400
C_CB
⎯
C_RB
⎯
Rb’Cc
⎯
⎯
0.7
0.65
9
MHz
pF
pF
ps
V_CE = 10V, f = 100MHz, I_C = 8mA
V_CB = 10V, f = 1.0MHz, I_E = 0
V_CB = 10V, f = 1.0MHz, I_E = 0
I_C = 4mA, V_CB = 10V, f = 31.8MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout, as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS31034 Rev. 12 - 2
1 of 3
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MMBTH24
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