MMBTH24 Datasheet, PDF (1/2 Pages) Samsung semiconductor – NPN (VHF MIXER TRANSISTOR)

MMBTH24
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Features
· Designed for VHF/UHF Amplifier Applications
and High Output VHF Oscillators
· High Current Gain Bandwidth Product
A
· Ideal for Mixer and RF Amplifier Applications
C
with collector currents in the 100mA - 30 mA
BC
Range
Mechanical Data
B TOP VIEW E
E
D
G
· Case: SOT-23, Molded Plastic
H
· Case material - UL Flammability Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
K
M
J
L
Method 208
· Terminal Connections: See Diagram
C
· Marking (See Page 2): K3Z
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approx.)
B
E
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
VCBO
V_CEO
V_EBO
I_C
P_d
RqJA
T_j, T_STG
MMBTH24
40
40
4.0
50
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
Collector-Base Capacitance
Collector-Base Feedback Capacitiance
Collector-Base Time Constant
Symbol
V_(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(SAT)
V_BE(SAT)
fT
C_CB
C_RB
Rb’Cc
Min Max Unit
Test Condition
40
¾
V
IC = 1mA, IB = 0
40
¾
V
I_C = 100mA, I_E = 0
4.0
¾
V
IE = 10mA, IC = 0
¾
100
nA VCB = 30V, IE = 0
¾
100
nA VEB = 2V, IC = 0
30
¾
¾ IC = 8mA, VCE = 10.0V
¾
0.5
V
IC = 4mA, IB = 400mA
¾
0.95
V
IC = 4mA, VCE = 10.0V
400
¾
MHz VCE = 10V, f = 100MHz, IC = 8mA
¾
0.7
pF VCB = 10V, f = 1.0MHz, IE = 0
¾
0.65
pF VCB = 10V, f = 1.0MHz, IE = 0
¾
9
ps IC = 4mA VCB = 10V, f =31.8MHz
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS31034 Rev. 6 - 2
1 of 2
MMBTH24
www.diodes.com