MMBTH10 Datasheet, PDF (1/2 Pages) Diodes Incorporated – NPN SURFACE MOUNT VHF/UHF TRANSISTOR

MMBTH10
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Features
· Designed for VHF/UHF Amplifier Applications
and High Output VHF Oscillators
· High Current Gain Bandwidth Product
· Ideal for Mixer and RF Amplifier Applications
with collector currents in the 100mA - 30 mA
Range
Mechanical Data
· Case: SOT-23, Molded Plastic
· Case material - UL Flammability Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking (See Page 2): K3H, K3Y
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approx.)
A
C
TOP VIEW
BC
B
E
E
D
G
H
K
J
L
C
B
E
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
VCBO
V_CEO
V_EBO
I_C
P_d
R_qJA
T_j, T_STG
M
MMBTH10
30
25
3.0
50
300
417
-55 to +150
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20
A
CC
2.30
1.40
2.50
D ^{TOP VIEW}
B ₀C_.89
E ^B
E
E
D
G
G^H
0.45
1.78
K
H
2.80
J
L
J
C
0.013
K 0.903
1.03
0.60
2.05
3^M.00
0.10
1.10
L ^B
E
0.45
0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
Collector-Base Capacitance
Collector-Base Feedback Capacitance
Collector-Base Time Constant
Symbol
Min
Max
Unit
Test Condition
V_(BR)CEO
25
¾
V
IC = 1mA IB = 0
V(BR)CBO
30
¾
V
IC = 100mA, IE = 0
V(BR)EBO
3.0
¾
V
IE = 10mA, IC = 0
ICBO
¾
100
nA VCB = 25V, IE = 0
I_EBO
¾
100
nA VEB = 2V, IC = 0
hFE
60
¾
¾ IC = 4mA, VCE = 10.0V
VCE(SAT)
¾
0.5
V
I_C = 4mA, I_B = 400mA
VBE(SAT)
¾
0.95
V
IC = 4mA, VCE = 10.0V
fT
CCB
C_RB
Rb’Cc
650
¾
MHz VCE = 10V, f = 100MHz, IC = 4mA
¾
0.7
pF VCB = 10V, f = 1.0MHz, IE = 0
¾
0.65
pF VCB = 10V, f = 1.0MHz, IE = 0
¾
9
ps VCB = 10V, f = 31.8MHz, IC = 4mA
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS31031 Rev. 4 - 2
1 of 2
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MMBTH10