MMBTA92_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBTA92
Features
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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• Epitaxial Planar Die Construction
• Complementary NPN Types Available (MMBTA42)
• Ideal for Medium Power Amplification and Switching
A
C
• Lead, Halogen and Antimony Free, RoHS Compliant
BC
"Green" Device (Notes 4 and 5)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
B TOP VIEW E
E
D
G
H
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
K
M
J
L
• Terminal Connections: See Diagram
C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: See Page 3
• Ordering Information: See Page 3
B
E
• Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K
0.903 1.10
L
0.45 0.61
M
0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1) (Note 3)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
Value
-300
-300
-5.0
-500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(SAT)
V_BE(SAT)
C_cb
f_T
Min
-300
-300
-5.0
⎯
⎯
25
40
25
⎯
⎯
⎯
50
Max
⎯
⎯
⎯
-250
-100
⎯
-0.5
-0.9
6.0
⎯
Unit
V
V
V
nA
nA
⎯
V
V
pF
MHz
Test Condition
I_C = -100μA, I_E = 0
I_C = -1.0mA, I_B = 0
I_E = -100μA, I_C = 0
V_CB = -200V, I_E = 0
V_CE = -3.0V, I_C = 0
I_C = -1.0mA, V_CE = -10V
I_C = -10mA, V_CE = -10V
I_C = -30mA, V_CE = -10V
I_C = -20mA, I_B = -2.0mA
I_C = -20mA, I_B = -2.0mA
V_CB = -20V, f = 1.0MHz,
I_E = 0
V_CE = -20V, I_C = -10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance
rating (R_θJA), power dissipation rating (P_d) and power derating curve (figure 1).
4. No purposefully added lead. Halogen and Antimony Free.
5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
DS30060 Rev. 11 - 2
1 of 3
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MMBTA92
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