MMBTA92_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

SPICE MODEL: MMBTA92
MMBTA92
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary NPN Type Available (MMBTA42)
· Ideal for Medium Power Amplification and Switching
· Lead Free/RoHS Compliant (Note 4)
A
C
· Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
BC
B TOP VIEW E
· Case: SOT-23
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
E
D
G
H
· Moisture Sensitivity: Level 1 per J-STD-020C
K
M
· Terminal Connections: See Diagram
J
L
· Terminals: Solderable per MIL-STD-202, Method 208
C
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
· Marking (See Page 2): K3R
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approximate)
B
E
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1) (Note 3)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
V_CBO
VCEO
V_EBO
IC
P_d
RqJA
T_j, T_STG
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
MMBTA92
-300
-300
-5.0
-500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol Min
V_(BR)CBO
V(BR)CEO
V_(BR)EBO
ICBO
I_EBO
-300
-300
-5.0
¾
¾
25
h_FE
40
25
VCE(SAT)
¾
V_BE(SAT)
¾
Ccb
¾
fT
50
Max
¾
¾
¾
-250
-100
¾
-0.5
-0.9
6.0
¾
Unit
Test Condition
V
I_C = -100mA, I_E = 0
V
I_C = -1.0mA, I_B = 0
V
IE = -100mA, IC = 0
nA
V_CB = -200V, I_E = 0
nA
V_CE = -3.0V, I_C = 0
I_C = -1.0mA, V_CE = -10V
¾
I_C = -10mA, V_CE = -10V
IC = -30mA, VCE = -10V
V
I_C = -20mA, I_B = -2.0mA
V
IC = -20mA, IB = -2.0mA
pF
MHz
V_CB = -20V, f = 1.0MHz, I_E = 0
VCE = -20V, IC = -10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance
rating (R_qJA), power dissipation rating (P_d) and power derating curve (figure 1).
4. No purposefully added lead.
DS30060 Rev. 10 - 2
1 of 3
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MMBTA92
ã Diodes Incorporated