MMBTA63_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SURFACE MOUNT DARLINGTON TRANSISTOR

Features
MMBTA63 / MMBTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
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• Epitaxial Planar Die Construction
• Complementary NPN Types Available
(MMBTA13 /MMBTA14)
• Ideal for Low Power Amplification and Switching
• High Current Gain
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Mechanical Data
A
C
TOP VIEW
BC
B
E
E
D
G
H
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
K
M
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
J
L
D
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
C
leadframe). Terminal Connections: See Diagram
• MMBTA63 Marking K2E, K3E See Page 3
• MMBTA64 Marking K3E See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
B
E
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 1)
(Note 1)
(Note 1)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
R_θJA
T_J, T_STG
Value
-30
-30
-10
-500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol Min
Max
V_(BR)CEO
-30
I_CBO
⎯
I_EBO
⎯
⎯
-100
-100
MMBTA63
5,000
MMBTA64
MMBTA63
h_FE
10,000
10,000
⎯
MMBTA64
20,000
V_CE(SAT)
⎯
-1.5
V_BE(SAT)
⎯
-2.0
f_T
125
⎯
Unit
Test Condition
V I_C = -100μA V_BE = 0V
nA V_CB = -30V, I_E = 0
nA V_EB = -10V, I_C = 0
I_C = -10mA, V_CE = -5.0V
⎯
I_C = -10mA, V_CE = -5.0V
I_C = -100mA, V_CE = -5.0V
I_C = -100mA, V_CE = -5.0V
V I_C = -100mA, I_B = -100μA
V I_C = -100mA, V_CE = -5.0V
MHz
V_CE = -5.0V, I_C = -10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
DS30055 Rev. 8 - 2
1 of 3
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