MMBTA63_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SURFACE MOUNT DARLINGTON TRANSISTOR

SPICE MODEL: MMBTA63 MMBTA64
Pb _{MMBTA63 / MMBTA64}
Lead-free
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary NPN Types Available
(MMBTA13 /MMBTA14)
· Ideal for Low Power Amplification and Switching
· High Current Gain
· Lead Free/RoHS Compliant Version (Note 3)
A
C
TOP VIEW
BC
Mechanical Data
· Case: SOT-23
B
E
E
D
G
H
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Solderable per MIL-STD-202, Method 208
K
M
J
L
D
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Terminal Connections: See Diagram
C
· MMBTA63 Marking (See Page 3): K2E, K3E
· MMBTA64 Marking (See Page 3): K3E
· Ordering & Date Code Information: See Page 3
· Weight: 0.008 grams (approximate)
B
E
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_qJA
T_j, T_STG
Value
-30
-30
-10
-500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol
Min
V_(BR)CEO
-30
I_CBO
¾
I_EBO
¾
MMBTA63
MMBTA64
MMBTA63
MMBTA64
h_FE
V_CE(SAT)
V_BE(SAT)
5,000
10,000
10,000
20,000
¾
¾
Max
¾
-100
-100
¾
-1.5
-2.0
f_T
125
¾
Unit
Test Condition
V
I_C = -100mA V_BE = 0V
nA
VCB = -30V, IE = 0
nA
VEB = -10V, IC = 0
IC = -10mA, VCE = -5.0V
¾
I_C = -10mA, V_CE = -5.0V
I_C = -100mA, V_CE = -5.0V
I_C = -100mA, V_CE = -5.0V
V
I_C = -100mA, I_B = -100mA
V
IC = -100mA, VCE = -5.0V
MHz
VCE = -5.0V, IC = -10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS30055 Rev. 7 - 2
1 of 3
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MMBTA63 / MMBTA64
ã Diodes Incorporated