MMBTA63 Datasheet, PDF (1/2 Pages) Transys Electronics – PNP SURFACE MOUNT DARLINGTON TRANSISTOR

MMBTA63 / MMBTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary NPN Types Available
(MMBTA13 / MMBTA14)
· Ideal for Medium Power Amplification and
Switching
A
C
TOP VIEW
BC
· High Current Gain
B
E
Mechanical Data
E
D
G
· Case: SOT-23, Molded Plastic
H
· Case material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
K
M
J
L
D
· Terminals: Solderable per MIL-STD-202,
Method 208
C
· Terminal Connections: See Diagram
· MMBTA63 Marking (See Page 2): K2E, K3E
· MMBTA64 Marking (See Page 2): K3E
· Ordering & Date Code Information: See Page 2
B
E
· Weight: 0.008 grams (approx.)
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
V_CBO
VCEO
V_EBO
I_C
P_d
R_qJA
Tj, TSTG
MMBTA63
MMBTA64
-30
-30
-10
-500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol
Min
V(BR)CEO
-30
ICBO
¾
IEBO
¾
MMBTA63
MMBTA64
MMBTA63
MMBTA64
h_FE
V_CE(SAT)
VBE(SAT)
5,000
10,000
10,000
20,000
¾
¾
Max
¾
-100
-100
¾
-1.5
-2.0
f_T
125
¾
Unit
Test Condition
V
IC = -100mA VBE = 0V
nA
V_CB = -30V, I_E = 0
nA
VEB = -10V, IC = 0
IC = -10mA, VCE = -5.0V
¾
IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
V
IC = -100mA, IB = -100mA
V
I_C = -100mA, V_CE = -5.0V
MHz
VCE = -5.0V, IC = -10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30055 Rev. 3 - 2
1 of 2
www.diodes.com
MMBTA63 / MMBTA64