MMBTA55_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBTA55 / MMBTA56
Features
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
• Epitaxial Planar Die Construction
• Complementary NPN Types Available (MMBTA05 /
MMBTA06)
A
C
• Ideal for Low Power Amplification and Switching
BC
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
B TOP VIEW E
• Qualified to AEC-Q101 Standards for High Reliability E
D
G
Mechanical Data
H
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020d
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• MMBTA55 Marking (See Page 3): K2H, K2G
• MMBTA56 Marking (See Page 3): K2G
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
K
M
J
L
C
B
E
SOT-23
Dim
Min
Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K
0.903 1.10
L
0.45 0.61
M
0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
MMBTA55
-60
-60
-4.0
-500
300
MMBTA56
-80
-80
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
MMBTA55
MMBTA56
MMBTA55
MMBTA56
MMBTA55
MMBTA56
MMBTA55
MMBTA56
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEX
h_FE
V_CE(SAT)
V_BE(SAT)
f_T
Min
Max
Unit
Test Condition
-60
-80
⎯
-60
-80
⎯
-4.0
⎯
⎯
-100
⎯
-100
V
I_C = -100μA, I_E = 0
V
I_C = -1.0mA, I_B = 0
V
I_E = -100μA, I_C = 0
nA
V_CB = -60V, I_E = 0
V_CB = -80V, I_E = 0
nA
V_CE = -60V, I_BO = 0V
V_CE = -80V, I_BO = 0V
100
⎯
⎯
-0.25
⎯
-1.2
⎯
I_C = -10mA, V_CE = -1.0V
I_C = -100mA, V_CE = -1.0V
V
I_C = -100mA, I_B = -10mA
V
I_C = -100mA, V_CE = -1.0V
50
⎯
MHz
V_CE = -1.0V, I_C = -100mA,
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
DS30054 Rev. 11 - 2
1 of 3
www.diodes.com
MMBTA55 / MMBTA56
© Diodes Incorporated