MMBTA55_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

SPICE MODELS: MMBTA55 MMBTA56
MMBTA55 / MMBTA56
Lead-free
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary NPN Types Available (MMBTA05 /
MMBTA06)
· Ideal for Medium Power Amplification and Switching
· Lead Free/RoHS Compliant (Note 3)
· Qualified to AEC-Q101 Standards for High Reliability
A
C
BC
Mechanical Data
· Case: SOT-23
B TOP VIEW E
E
D
G
H
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
M
· Moisture Sensitivity: Level 1 per J-STD-020C
J
L
· Terminal Connections: See Diagram
· Terminals: Solderable per MIL-STD-202, Method 208
C
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
· MMBTA55 Marking (See Page 2): K2H
· MMBTA56 Marking (See Page 2): K2G
B
E
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current - Continuous (Note 1)
I_C
Power Dissipation (Note 1)
P_d
Thermal Resistance, Junction to Ambient (Note 1)
R_qJA
Operating and Storage and Temperature Range
T_j, T_STG
Electrical Characteristics @ T_A = 25°C unless otherwise specified
MMBTA55
MMBTA56
-60
-80
-60
-80
-4.0
-500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
MMBTA55
MMBTA56
V_(BR)CBO
-60
-80
¾
V
IC = -100mA, IE = 0
Collector-Emitter Breakdown Voltage
MMBTA55
MMBTA56
V_(BR)CEO
-60
-80
¾
V
I_C = -1.0mA, I_B = 0
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
V_(BR)EBO
-4.0
MMBTA55
MMBTA56
I_CBO
¾
MMBTA55
MMBTA56
I_CEX
¾
¾
-100
-100
V
I_E = -100mA, I_C = 0
nA
VCB = -60V, IE = 0
V_CB = -80V, I_E = 0
nA
VCE = -60V, IBO = 0V
V_CE = -80V, I_BO = 0V
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h_FE
V_CE(SAT)
V_BE(SAT)
100
¾
¾
¾
-0.25
-1.2
¾
IC = -10mA, VCE = -1.0V
I_C = -100mA, V_CE = -1.0V
V
IC = -100mA, IB = -10mA
V
IC = -100mA, VCE = -1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f_T
50
¾
MHz
VCE = -1.0V, IC = -100mA,
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS30054 Rev. 9 - 2
1 of 3
MMBTA55 / MMBTA56
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ã Diodes Incorporated