MMBTA55 Datasheet, PDF (1/2 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBTA55 / MMBTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary NPN Types Available
(MMBTA05 / MMBTA06)
A
· Ideal for Medium Power Amplification and
C
Switching
Mechanical Data
· Case: SOT-23, Molded Plastic
· Case material - UL Flammability Rating
Classification 94V-0
B TOP VIEW E
E
D
G
H
BC
· Moisture sensitivity: Level 1 per J-STD-020A
K
M
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
J
L
C
· MMBTA55 Marking (See Page 2): K2H
· MMBTA56 Marking (See Page 2): K2G
· Ordering & Date Code Information: See Page 2 _B
E
· Weight: 0.008 grams (approx.)
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
VEBO
I_C
P_d
R_qJA
T_j, T_STG
MMBTA55
MMBTA56
-60
-80
-60
-80
-4.0
-500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol
Min
MMBTA55
MMBTA56
V_(BR)CBO
-60
-80
MMBTA55
MMBTA56
V(BR)CEO
-60
-80
V(BR)EBO
-4.0
MMBTA55
MMBTA56
I_CBO
¾
MMBTA55
MMBTA56
ICEX
¾
hFE
VCE(SAT)
VBE(SAT)
100
¾
¾
f_T
50
Max
¾
¾
¾
-100
-100
¾
-0.25
-1.2
¾
Unit
Test Condition
V
IC = -100mA, IE = 0
V
IC = -1.0mA, IB = 0
V
IE = -100mA, IC = 0
nA
VCB = -60V, IE = 0
VCB = -80V, IE = 0
nA
VCE = -60V, IBO = 0V
VCE = -80V, IBO = 0V
¾
IC = -10mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
V
I_C = -100mA, I_B = -10mA
V
IC = -100mA, VCE = -1.0V
MHz
VCE = -1.0V, IC = -100mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30054 Rev. 4 - 2
1 of 2
www.diodes.com
MMBTA55 / MMBTA56